GAIN MEASUREMENTS ON ONE-STRAINED, 2-STRAINED, AND 3-STRAINED GAINP QUANTUM-WELL LASER-DIODES

被引：9

作者：

HUNZIKER, G ^{[1
]}

KNOP, W ^{[1
]}

HARDER, C ^{[1
]}

机构：

[1] SWISS FED INST TECHNOL,ELECTROMAGNET FIELDS & MICROWAVE ELECTR,CH-8092 ZURICH,SWITZERLAND

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1994年 / 30卷 / 10期

关键词：

D O I：

10.1109/3.328605

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on systematic investigations of the modal gain below threshold for one, two, and three compressively strained 680 nm AlGaInP quantum well lasers using the Hakki-Paoli method. Accurate values of the gain are obtained by carefully spacial filtering the light for the fundamental waveguide mode. Gain flattening and peak gain shifts are observed even at moderate pumping levels. It is shown that the gain scales very well with the number of quantum wells. We also observe that gain flattening starts at current densities per quantum well of 700 A/cm2.

引用

页码：2235 / 2238

页数：4

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