SILICIDE STRUCTURAL EVOLUTION IN HIGH-DOSE COBALT-IMPLANTED SI(100) CRYSTALS

被引：14

作者：

TAN, ZQ

BUDNICK, JI

SANCHEZ, FH

TOURILLON, G

NAMAVAR, F

HAYDEN, HC

机构：

[1] UNIV CONNECTICUT,INST MAT SCI,STORRS,CT 06269

[2] LAB UTILISAT RAYONNEMENT ELECTROMAGNET,F-91405 ORSAY,FRANCE

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.40.6368

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6368 / 6373

页数：6

共 16 条

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[7]

MURARKA SP, 1983, SILICIDES VLSI APPLI, P30

[8] NUCLEAR-RESONANCE PROFILING OF HIGH-DOSE IMPLANTS OF AL IN SI [J].

NAMAVAR, F ;

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[9]

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[10]

NAMAVAR F, UNPUB

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