ION-BEAM OXIDATION OF NB-BASED JOSEPHSON-JUNCTIONS

被引:8
作者
HERWIG, R
机构
关键词
D O I
10.1049/el:19800604
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:850 / 851
页数:2
相关论文
共 5 条
[1]   FABRICATION AND PROPERTIES OF NIOBIUM JOSEPHSON TUNNEL-JUNCTIONS [J].
BROOM, RF ;
LAIBOWITZ, RB ;
MOHR, TO ;
WALTER, W .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (02) :212-222
[2]   FABRICATION PROCESS FOR JOSEPHSON INTEGRATED-CIRCUITS [J].
GREINER, JH ;
KIRCHER, CJ ;
KLEPNER, SP ;
LAHIRI, SK ;
WARNECKE, AJ ;
BASAVAIAH, S ;
YEN, ET ;
BAKER, JM ;
BROSIOUS, PR ;
HUANG, HCW ;
MURAKAMI, M ;
AMES, I .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (02) :195-205
[3]   PENETRATION DEPTH MEASUREMENTS ON TYPE-2 SUPERCONDUCTING FILMS [J].
HENKELS, WH ;
KIRCHER, CJ .
IEEE TRANSACTIONS ON MAGNETICS, 1977, 13 (01) :63-66
[4]   SEMICONDUCTOR APPLICATIONS OF THIN-FILMS DEPOSITED BY NEUTRALIZED ION-BEAM SPUTTERING [J].
SITES, JR .
THIN SOLID FILMS, 1977, 45 (01) :47-53
[5]  
WEINACHT W, 1969, PHYS STAT SOL, V33, pK169