SEMICONDUCTOR APPLICATIONS OF THIN-FILMS DEPOSITED BY NEUTRALIZED ION-BEAM SPUTTERING

被引：8

作者：

SITES, JR ^{[1
]}

机构：

[1] COLORADO STATE UNIV,DEPT PHYS,FT COLLINS,CO 80523

来源：

THIN SOLID FILMS | 1977年 / 45卷 / 01期

关键词：

D O I：

10.1016/0040-6090(77)90200-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：47 / 53

页数：7

共 15 条

[1]

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BURK, DE ;

SITES, JR .

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[4] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE-GALLIUM ARSENIDE INTERFACE [J].

FOSTER, JE ;

SWARTZ, JM .

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[5]

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[6] ION-BEAM ETCHING [J].

GLOERSEN, PG .

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[7] MOS-GATE TECHNOLOGY ON GAAS AND OTHER 3-5 COMPOUNDS [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :860-867

[8] SILICON NITRIDE FILMS BY REACTIVE SPUTTERING [J].

HU, SM ;

GREGOR, LV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) :826-+

[9] ION-BEAM TEXTURING [J].

HUDSON, WR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :286-289

[10]

KAUFMAN HR, 1961, ELECTROSTATIC PROPUL, P3

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