DEEP-LEVEL TRANSIENT SPECTROSCOPY OF ALXGA1-XAS/GAAS USING NONDESTRUCTIVE ACOUSTOELECTRIC VOLTAGE MEASUREMENT

被引：21

作者：

TABIBAZAR, M

HAJJAR, F

机构：

来源：

关键词：

D O I：

10.1109/16.24367

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1189 / 1195

页数：7

共 15 条

[1] INVESTIGATION OF DEEP LEVELS IN HIGH-RESISTIVITY BULK MATERIALS BY PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY .1. REVIEW AND ANALYSIS OF SOME BASIC PROBLEMS
BALLAND, JC
ZIELINGER, JP
NOGUET, C
TAPIERO, M
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1986, 19 (01) : 57 - 70
[2] Cherifa A.B., 1987, MATER RES SOC S P, V104, P401
[3] FRITZ IJ, 1981, J APPL PHYS, V52
[4] TRANSIENT SPECTROSCOPY USING THE HALL-EFFECT
KACHWALLA, Z
MILLER, DJ
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (20) : 1438 - 1440
[5] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[6] ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS
MARTIN, GM
MITONNEAU, A
MIRCEA, A
[J]. ELECTRONICS LETTERS, 1977, 13 (07) : 191 - 193
[7] MARTIN GM, 1979, THERMALLY STIMULATED
[8] Milnes A.G, 1973, DEEP IMPURITIES SEMI, P227
[9] Tabib-Azar M., 1984, IEEE 1984 Ultrasonics Symposium Proceedings (Cat. No. 84CH2112-1), P926, DOI 10.1109/ULTSYM.1984.198438
[10] Tabib-Azar M., 1985, IEEE 1985 Ultrasonics Symposium. Proceedings. (Cat. No.85CH2209-5), P1016