STOICHIOMETRY AND ATOMIC DEFECTS IN RF-SPUTTERED SIO

被引：28

作者：

HICKMOTT, TW

BAGLIN, JE

机构：

[1] IBM Thomas J. Watson Reseach Center, Yorktown Heights

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 01期

关键词：

D O I：

10.1063/1.325662

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron microprobe and helium ion backscattering are used to measure the stoichiometry of rf-sputtered SiO2 films at a precision of ≤1%. Both oxygen-excess and oxygen-deficient films occur. Optical absorption and electron spin resonance characterize atomic defects in the films. The correlation between stoichiometry and atomic defects is poor. The reproducibility of composition and of atomic defects from run to run, when sputtering conditions are held constant, is good.

引用

页码：317 / 323

页数：7

共 29 条

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