CONTACT FAILURES DUE TO POLYMER-FILMS FORMED DURING VIA-HOLE ETCHING

被引：6

作者：

MAYUMI, S ^{[1
]}

NISHIDA, S ^{[1
]}

UEDA, S ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD,DIV MEMORY,KYOTO 617,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 04期

关键词：

Contact failure; Contact resistance; Multilevel interconnection; Polymer film; Via hole;

D O I：

10.1143/JJAP.29.L559

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The contact resistance between the first metal and the second metal for double-level metallization was increased due to the polymer film formed during via-hole etching with C2F6/CHF3plasma. The resistance increases with increasing over-etching time and etching pressure, or with decreasing electrode temperature for the via-hole etching. A Si-coated electrode is more effective in reducing the contact resistance than a carbon electrode is. Furnace heating at 380°C as a post-treatment is very effective in removing the etching polymer and in decreasing the contact resistance. © 1990 IOP Publishing Ltd.

引用

页码：L559 / L562

页数：4

共 8 条

[1] CONTAMINATION OF SILICON SURFACES EXPOSED TO CHF3 PLASMAS - AN XPS STUDY OF THE FILM AND THE FILM-SURFACE INTERFACE [J].

CARDINAUD, C ;

RHOUNNA, A ;

TURBAN, G ;

GROLLEAU, B .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (06) :1472-1477

[2]

EINSPRUCH NG, 1987, VLSI ELECTRONICS MIC, V15, P294

[3] METAL-CONTAINING PLASMA POLYMERIZED FLUOROCARBON FILMS - THEIR SYNTHESIS, STRUCTURE, AND POLYMERIZATION MECHANISM [J].

KAY, E ;

DILKS, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :428-430

[4] A STUDY OF CCIF3/H2 REACTIVE ION ETCHING DAMAGE AND CONTAMINATION EFFECTS IN SILICON [J].

MU, XC ;

FONASH, SJ ;

OEHRLEIN, GS ;

CHAKRAVARTI, SN ;

PARKS, C ;

KELLER, J .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) :2958-2967

[5]

SUGANO T, 1980, HANDOTAI PLASMA PROC, P307

[6]

SZE SM, 1983, VLSI TECHNOLOGY, P335

[7]

SZE SM, 1983, VLSI TECHNOLOGY, P324

[8]

VALENTE M, 1984, J ELECTROCHEM SOC, V131, P1984

← 1 →