ELECTRON-TRANSPORT IN SILICON INVERSION-LAYERS AT HIGH MAGNETIC-FIELDS AND THE INFLUENCE OF SUBSTRATE BIAS

被引：11

作者：

NICHOLAS, RJ

KRESSROGERS, E

KUCHAR, F

PEPPER, M

PORTAL, JC

STRADLING, RA

机构：

[1] UNIV OXFORD, CLARENDON LAB, PARKS RD, OXFORD, ENGLAND

[2] LUDWIG BOLTZMANN INST FESTKORPERPHYS, VIENNA, AUSTRIA

[3] UNIV CAMBRIDGE, CAVENDISH LAB, CAMBRIDGE CB3 0HE, ENGLAND

[4] INST NATL SCI APPL LYON, F-31077 TOULOUSE, FRANCE

[5] UNIV ST ANDREWS, DEPT PHYS, ST ANDREWS KY16 9ST, FIFE, SCOTLAND

来源：

SURFACE SCIENCE | 1980年 / 98卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(80)90509-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：283 / 298

页数：16

共 27 条

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[2] VALLEY SPLITTING IN THE SILICON INVERSION LAYER - MISORIENTATION EFFECTS
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[3] ANALYSIS OF PXXMINIMA IN SURFACE QUANTUM OSCILLATIONS ON (100)NORMAL-TYPE SILICON INVERSION LAYERS
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[7] VARIABLE RANGE HOPPING IN A NONUNIFORM DENSITY OF STATES
HAMILTON, EM
[J]. PHILOSOPHICAL MAGAZINE, 1972, 26 (04): : 1043 - &
[8] Kawaji S, 1975, PROGR THEOR PHYS SUP, V57, P176
[9] MAGNETIC-FIELD DEPENDENCE OF VALLEY SPLITTING IN N-TYPE INVERTED SILICON MOSFET SURFACES
KOEHLER, H
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LANDWEHR, G
[J]. SOLID STATE COMMUNICATIONS, 1978, 27 (10) : 955 - 959
[10] INFLUENCE OF THE VALLEY SPLITTING AND LINESHAPE IN THE DENSITY OF STATES ON THE QUANTUM OSCILLATIONS OF N-TYPE (100) INVERTED SILICON MOSFET SURFACES
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ROOS, M
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 92 (02): : 489 - 494

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