TIME-BANDWIDTH PRODUCT OF GAIN-SWITCHED IN0.2GA0.8AS/GAAS MICROCAVITY LASERS

被引:1
作者
MICHLER, P
RUHLE, WW
REINER, G
EBELING, KJ
MORITZ, A
机构
[1] UNIV ULM,OPTOELEKTR ABT,D-89069 ULM,GERMANY
[2] UNIV STUTTGART,INST PHYS 4,D-70550 STUTTGART,GERMANY
关键词
D O I
10.1063/1.115534
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present the temporal and spectral evolution of stimulated emission from In0.2Ga0.8As/GaAs microcavity laser samples at 20 K after femtosecond optical excitation. Both, linewidth and chirp become smaller when the cavity resonance is at shorter wavelengths within the gain spectrum of the quantum well: The linewidth is reduced from Delta lambda = 0.41 nm at 923 nm, where the threshold is lowest, to Delta lambda = 0.26 nm at 884 nm. Comparison with a phenomenological model yields linewidth enhancement factors alpha of 2 and 5 for emission wavelengths of 884 and 925 nm, respectively. A time-bandwidth product of 0.68 is obtained at the shorter wavelength. (C) 1995 American Institute of Physics.
引用
收藏
页码:1363 / 1365
页数:3
相关论文
共 16 条
[1]   DOUBLE-FUSED 1.52-MU-M VERTICAL-CAVITY LASERS [J].
BABIC, DI ;
DUDLEY, JJ ;
STREUBEL, K ;
MIRIN, RP ;
BOWERS, JE ;
HU, EL .
APPLIED PHYSICS LETTERS, 1995, 66 (09) :1030-1032
[2]   LINEWIDTH ENHANCEMENT FACTOR AND CARRIER-INDUCED DIFFERENTIAL INDEX IN INGAAS SEPARATE CONFINEMENT MULTI-QUANTUM-WELL LASERS [J].
GRABMAIER, A ;
FUCHS, G ;
HANGLEITER, A ;
GLEW, RW ;
GREENE, PD ;
WHITEAWAY, JEA .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (04) :2467-2469
[3]   ELECTRICALLY GAIN-SWITCHED VERTICAL-CAVITY SURFACE-EMITTING LASERS [J].
HASNAIN, G ;
WIESENFELD, JM ;
DAMEN, TC ;
SHAH, J ;
WYNN, JD ;
WANG, YH ;
CHO, AY .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (01) :6-9
[4]   THEORY OF THE LINEWIDTH OF SEMICONDUCTOR-LASERS [J].
HENRY, CH .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (02) :259-264
[5]   DYNAMIC-RESPONSE OF SHORT-CAVITY SEMICONDUCTOR-LASERS [J].
JAHNKE, F ;
KOCH, SW ;
HENNEBERGER, K .
APPLIED PHYSICS LETTERS, 1993, 62 (19) :2313-2315
[6]   EFFECT OF NONLINEAR GAIN REDUCTION ON SEMICONDUCTOR-LASER WAVELENGTH CHIRPING [J].
KOCH, TL ;
LINKE, RA .
APPLIED PHYSICS LETTERS, 1986, 48 (10) :613-615
[7]   LINEWIDTH AND ALPHA-FACTOR IN ALGAAS/GAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS [J].
KUKSENKOV, D ;
FELD, S ;
WILMSEN, C ;
TEMKIN, H ;
SWIRHUN, S ;
LEIBENGUTH, R .
APPLIED PHYSICS LETTERS, 1995, 66 (03) :277-279
[8]   TRANSIENT PULSE RESPONSE OF IN0.2GA0.8AS/GAAS MICROCAVITY LASERS [J].
MICHLER, P ;
LOHNER, A ;
RUHLE, WW ;
REINER, G .
APPLIED PHYSICS LETTERS, 1995, 66 (13) :1599-1601
[9]   LINEWIDTH ENHANCEMENT FACTOR OF VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES [J].
MOLLER, B ;
ZEEB, E ;
FIEDLER, U ;
HACKBARTH, T ;
EBELING, KJ .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (08) :921-923
[10]   LINEWIDTH BROADENING FACTOR IN SEMICONDUCTOR-LASERS - AN OVERVIEW [J].
OSINSKI, M ;
BUUS, J .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (01) :9-29