LINEWIDTH ENHANCEMENT FACTOR OF VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES

被引：17

作者：

MOLLER, B ^{[1
]}

ZEEB, E ^{[1
]}

FIEDLER, U ^{[1
]}

HACKBARTH, T ^{[1
]}

EBELING, KJ ^{[1
]}

机构：

[1] DAIMLER BENZ RES CTR,D-89013 ULM,GERMANY

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 08期

关键词：

D O I：

10.1109/68.313052

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The linewidth enhancement factor alpha characterizes the performance of semiconductor lasers, such as spectral linewidth broadening for CW operation and wavelength chirping under high-frequency modulation. We have for the first time determined the alpha factor of vertical-cavity surface-emitting lasers from the measured linewidth-power product and more precisely from the frequency to amplitude modulation ratio at high-frequency current modulation. Both methods provide the same alpha factor of 3.7. The minimum linewidth was as narrow as 70 MHz and the linewidth-power product was 5.4 MHz.mW neglecting the residual linewidth.

引用

页码：921 / 923

页数：3

共 17 条

[1]

Ebeling KJ, 1993, INTEGRATED OPTOELECT

[2] SUBMILLIAMP THRESHOLD VERTICAL-CAVITY LASER-DIODES [J].