CRITICAL RADIAL TEMPERATURE-GRADIENT INDUCING SLIP DISLOCATIONS IN SILICON EPITAXY USING DUAL HEATING OF THE 2 SURFACES OF A WAFER

被引：1

作者：

AKIYAMA, N

INOUE, Y

SUZUKI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 11期

关键词：

D O I：

10.1143/JJAP.25.1619

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1619 / 1622

页数：4

共 11 条

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