LOW DISLOCATION DENSITY RF-HEATED EPITAXIAL SILICON

被引：16

作者：

ROBINSON, M ^{[1
]}

CHANG, CC ^{[1
]}

MARCUS, RB ^{[1
]}

ROZGONYI, GA ^{[1
]}

KATZ, LE ^{[1
]}

PAULNACK, CL ^{[1
]}

机构：

[1] BELL TEL LABS INC, ALLENTOWN, PA 18103 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 12期

关键词：

D O I：

10.1149/1.2123693

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2858 / 2860

页数：3

共 18 条

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[4]

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[8] DISLOCATIONS IN THERMALLY STRESSED SILICON WAFERS [J].

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[9] INFLUENCE OF SILICON SLICE CURVATURE ON THERMALLY INDUCED STRESSES [J].

HUFF, HR ;

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[10]

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