HYDROGEN PERMEATION, SI DEFECT GENERATION, AND THEIR INTERACTION DURING CHF3/O-2 CONTACT ETCHING

被引：4

作者：

AWADELKARIM, OO

MIKULAN, PI

GU, T

DITIZIO, RA

FONASH, SJ

机构：

[1] Electronic Materials and Processing Research Laboratory, Pennsylvania State University, University Park

[2] Processing Research Laboratory, Pennsylvania State University, University Park

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 03期

关键词：

D O I：

10.1109/55.285394

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hydrogen permeation and the simultaneous Si substrate defect generation occurring during contact reactive ion etching utilizing CHF3-based chemistries were studied using SiO2/Si structures. The process-parameter space for the etches consisted of magnetic held intensity and overetch percentage. Characterization was carried out by means of 1 MHz capacitance-voltage and deep-level transient spectroscopy measurements. This characterization establishes for the first time that the presence of permeating hydrogen does not prevent Si defect generation but, instead, acts only to passivate such defects. The characterization also demonstrates that this hydrogen permeation into the Si substrate is enhanced by increasing the magnetic field intensity.

引用

页码：85 / 87

页数：3

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