EFFECTS OF DRY ETCHING ON THE ELECTRICAL-PROPERTIES OF SILICON

被引：19

作者：

HEDDLESON, JM ^{[1
]}

HORN, MW ^{[1
]}

FONASH, SJ ^{[1
]}

NGUYEN, DC ^{[1
]}

机构：

[1] INTEL CORP,SANTA CLARA,CA 95051

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 01期

关键词：

D O I：

10.1116/1.584024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：280 / 283

页数：4

共 18 条

[1] LOW-ENERGY HYDROGEN IMPLANTATION FOR SILICON SCHOTTKY-BARRIER MODIFICATION [J].

ASHOK, S ;

RINGEL, SA .

VACUUM, 1986, 36 (11-12) :917-920

[2] HYDROGEN IN CRYSTALLINE SILICON - A DEEP DONOR [J].

CAPIZZI, M ;

MITTIGA, A .

APPLIED PHYSICS LETTERS, 1987, 50 (14) :918-920

[3] HYDROGENATION AND ANNEALING KINETICS IN BORON-DOPED AND ALUMINUM-DOPED SILICON [J].

DADGAR, S ;

HSU, CCH ;

PAN, SCS ;

SAH, CT .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) :1422-1429

[4] SILICON DAMAGE CAUSED BY CCL4 REACTIVE ION ETCHING - ITS CHARACTERIZATION AND REMOVAL BY RAPID THERMAL ANNEALING [J].

FONASH, SJ ;

SINGH, R ;

ROHATGI, A ;

RAICHOUDHURY, P ;

CAPLAN, PJ ;

POINDEXTER, EH .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :862-866

[5]

FONASH SJ, 1985, SOLID STATE TECHNOL, V28, P201

[6] PERMEATION OF HYDROGEN INTO SILICON DURING LOW-ENERGY HYDROGEN-ION BEAM BOMBARDMENT [J].

HORN, MW ;

HEDDLESON, JM ;

FONASH, SJ .

APPLIED PHYSICS LETTERS, 1987, 51 (07) :490-492

[7] DEUTERIUM PASSIVATION OF GRAIN-BOUNDARY DANGLING BONDS IN SILICON THIN-FILMS [J].

JOHNSON, NM ;

BIEGELSEN, DK ;

MOYER, MD .

APPLIED PHYSICS LETTERS, 1982, 40 (10) :882-884

[8] A SPREADING RESISTANCE TECHNIQUE FOR RESISTIVITY MEASUREMENTS ON SILICON [J].

MAZUR, RG ;

DICKEY, DH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) :255-&

[9] SEVERE LOSS OF DOPANT ACTIVITY DUE TO CHF3+CO2 REACTIVE ION ETCH DAMAGE [J].

MIKKELSEN, JC ;

WU, IW .

APPLIED PHYSICS LETTERS, 1986, 49 (02) :103-105

[10] AR ION-BEAM AND CCL4 REACTIVE ION ETCHING - A COMPARISON OF ETCHING DAMAGE AND OF DAMAGE PASSIVATION BY HYDROGEN [J].

MU, XC ;

FONASH, SJ ;

YANG, BY ;

VEDAM, K ;

ROHATGI, A ;

RIEGER, J .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) :4282-4291

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