DEFECT GENERATION DURING PLASMA TREATMENT OF SEMICONDUCTORS

Defect generation during various dry etching processes is studied and the important parameters for the formation of point defects are discussed. The role of intrinsic defects and the fast diffusion of defects during the plasma treatment is considered. Special emphasis is devoted to the influence of hydrogen on the defect generation in plasma etching techniques. The evidence for optical recombination at hydrogen stabilized platelets in Si, as reported previously in the literature, is critically reviewed.