FORMATION OF A SILICON-CARBIDE LAYER DURING CF4/H2 DRY ETCHING OF SI

[1] PLASMA-ASSISTED ETCHING IN MICROFABRICATION [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1983, 13 : 91 - 116

[2] COBURN JW, 1982, AM VACUUM SOC MONOGR, P42

[3] PARAMETER AND REACTOR DEPENDENCE OF SELECTIVE OXIDE RIE IN CF4+H2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2282 - 2287

[4] SILICON DAMAGE CAUSED BY HYDROGEN CONTAINING PLASMAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (11) : 2237 - 2241

[5] X-RAY PHOTOELECTRON-SPECTROSCOPY AND AUGER-ELECTRON SPECTROSCOPY STUDIES OF GLOW-DISCHARGE SI1-XCX-H FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3365 - 3372

[6] SYNCHROTRON PHOTOEMISSION INVESTIGATION OF THE INITIAL-STAGES OF FLUORINE ATTACK ON SI SURFACES - RELATIVE ABUNDANCE OF FLUOROSILYL SPECIES [J]. PHYSICAL REVIEW B, 1984, 30 (02): : 764 - 770

[7] SILICON NEAR-SURFACE DISORDER AND ETCH RESIDUES CAUSED BY CCIF3/H2 REACTIVE ION ETCHING [J]. APPLIED PHYSICS LETTERS, 1985, 46 (07) : 686 - 688

[8] NEAR-SURFACE DAMAGE AND CONTAMINATION AFTER CF4-H2 REACTIVE ION ETCHING OF SI [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : 1441 - 1447

[9] STUDY OF SILICON CONTAMINATION AND NEAR-SURFACE DAMAGE CAUSED BY CF4/H2 REACTIVE ION ETCHING [J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 420 - 422

[10] OEHRLEIN GS, UNPUB

[1] PLASMA-ASSISTED ETCHING IN MICROFABRICATION [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1983, 13 : 91 - 116

[2] COBURN JW, 1982, AM VACUUM SOC MONOGR, P42

[3] PARAMETER AND REACTOR DEPENDENCE OF SELECTIVE OXIDE RIE IN CF4+H2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2282 - 2287

[4] SILICON DAMAGE CAUSED BY HYDROGEN CONTAINING PLASMAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (11) : 2237 - 2241

[5] X-RAY PHOTOELECTRON-SPECTROSCOPY AND AUGER-ELECTRON SPECTROSCOPY STUDIES OF GLOW-DISCHARGE SI1-XCX-H FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3365 - 3372

[6] SYNCHROTRON PHOTOEMISSION INVESTIGATION OF THE INITIAL-STAGES OF FLUORINE ATTACK ON SI SURFACES - RELATIVE ABUNDANCE OF FLUOROSILYL SPECIES [J]. PHYSICAL REVIEW B, 1984, 30 (02): : 764 - 770

[7] SILICON NEAR-SURFACE DISORDER AND ETCH RESIDUES CAUSED BY CCIF3/H2 REACTIVE ION ETCHING [J]. APPLIED PHYSICS LETTERS, 1985, 46 (07) : 686 - 688

[8] NEAR-SURFACE DAMAGE AND CONTAMINATION AFTER CF4-H2 REACTIVE ION ETCHING OF SI [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : 1441 - 1447

[9] STUDY OF SILICON CONTAMINATION AND NEAR-SURFACE DAMAGE CAUSED BY CF4/H2 REACTIVE ION ETCHING [J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 420 - 422

[10] OEHRLEIN GS, UNPUB