DIFFUSION OF LITHIUM INTO GE AND SI

被引：30

作者：

PRATT, B

FRIEDMAN, F

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1966年 / 37卷 / 04期

关键词：

D O I：

10.1063/1.1708620

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1893 / &

共 13 条

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BACKENSTOSS, G .

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[2] THE USE OF AN INTERFERENCE MICROSCOPE FOR MEASUREMENT OF EXTREMELY THIN SURFACE LAYERS [J].

BOND, WL ;

SMITS, FM .

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[3] RELATION BETWEEN SURFACE CONCENTRATION AND AVERAGE CONDUCTIVITY IN DIFFUSED LAYERS IN GERMANIUM [J].

CUTTRISS, DB .

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[4] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS INTO GERMANIUM [J].

FULLER, CS .

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[5] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J].

FULLER, CS ;

DITZENBERGER, JA .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) :544-553

[6] MOBILITY OF IMPURITY IONS IN GERMANIUM AND SILICON [J].

FULLER, CS ;

SEVERIENS, JC .

PHYSICAL REVIEW, 1954, 96 (01) :21-24

[7] DIFFUSION OF LITHIUM INTO GERMANIUM AND SILICON [J].

FULLER, CS ;

DITZENBERGER, JA .

PHYSICAL REVIEW, 1953, 91 (01) :193-193

[8] DIFFUSANT IMPURITY-CONCENTRATION PROFILES IN THIN LAYERS ON SILICON [J].

ILES, PA ;

LEIBENHAUT, B .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :331-&

[9] DIFFUSION OF LI IN SI AT HIGH-T AND THE ISOTOPE EFFECT [J].

PELL, EM .

PHYSICAL REVIEW, 1960, 119 (03) :1014-1021

[10] DIFFUSION RATE OF LI IN SI AT LOW TEMPERATURES [J].

PELL, EM .

PHYSICAL REVIEW, 1960, 119 (04) :1222-1225

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