EXTREMELY LARGE BAND-GAP SHIFTS FOR MQW STRUCTURES BY SELECTIVE EPITAXY ON SIO2 MASKED SUBSTRATES

被引：16

作者：

JOYNER, CH

CHANDRASEKHAR, S

SULHOFF, JW

DENTAI, AG

机构：

[1] At & T Bell Laboratories, Crawford Hill Labs., Holmdel

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 09期

关键词：

D O I：

10.1109/68.157130

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate selective epitaxy through SiO2 masks of varied geometry with the goal of making planar photonic integrated circuits. The InGaAs / InP, InGaAsP / InP, and InGaAs / InGaAsP MQW material systems are studied with atmospheric and 100 torr MOVPE. Extremely large band gap shifts (136 meV) may be achieved, more than enough to allow construction of lasers, modulators, and low loss waveguides in a single plane.

引用

页码：1006 / 1009

页数：4

共 9 条

[1]

AOKI M, P OFC 92

[2] ANALYSIS OF MOCVD OF GAAS ON PATTERNED SUBSTRATES [J].