MECHANISM OF IMPURITY DIFFUSION IN SILICON

[1] ATALLA MM, 1960, PROPERTIES ELEMENTAL, V5, P163

[2] EFFECT OF OXIDATION ON ANOMALOUS DIFFUSION IN SILICON [J]. PHILOSOPHICAL MAGAZINE, 1971, 24 (189): : 567 - &

[3] DONOR DIFFUSION DYNAMICS IN SILICON [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02): : 397 - +

[4] INTRINSIC DIFFUSION OF BORON AND PHOSPHORUS IN SILICON FREE FROM SURFACE EFFECTS [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02): : 389 - +

[5] EXPERIMENTAL-CONDITION DEPENDENCE OF PHOSPHORUS DIFFUSIVITY IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1970, 25 (13) : 856 - +

[6] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[7] LACHAPPELLE TJ, 1957, AF18603117 CONTR

[8] OXIDATION, DEFECTS AND VACANCY DIFFUSION IN SILICON [J]. PHILOSOPHICAL MAGAZINE, 1969, 20 (167): : 881 - &

[9] In honour of Prof. Dr. Dr. h. c. Alfred Seeger - on the occasion of his 80th birthday [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (09): : 3024 - 3026

[10] DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON [J]. SOLID-STATE ELECTRONICS, 1961, 2 (2-3) : 123 - 132

[1] ATALLA MM, 1960, PROPERTIES ELEMENTAL, V5, P163

[2] EFFECT OF OXIDATION ON ANOMALOUS DIFFUSION IN SILICON [J]. PHILOSOPHICAL MAGAZINE, 1971, 24 (189): : 567 - &

[3] DONOR DIFFUSION DYNAMICS IN SILICON [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02): : 397 - +

[4] INTRINSIC DIFFUSION OF BORON AND PHOSPHORUS IN SILICON FREE FROM SURFACE EFFECTS [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02): : 389 - +

[5] EXPERIMENTAL-CONDITION DEPENDENCE OF PHOSPHORUS DIFFUSIVITY IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1970, 25 (13) : 856 - +

[6] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[7] LACHAPPELLE TJ, 1957, AF18603117 CONTR

[8] OXIDATION, DEFECTS AND VACANCY DIFFUSION IN SILICON [J]. PHILOSOPHICAL MAGAZINE, 1969, 20 (167): : 881 - &

[9] In honour of Prof. Dr. Dr. h. c. Alfred Seeger - on the occasion of his 80th birthday [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (09): : 3024 - 3026

[10] DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON [J]. SOLID-STATE ELECTRONICS, 1961, 2 (2-3) : 123 - 132