PHOTOACOUSTIC OPTICAL AND THERMAL CHARACTERIZATION OF SI AND GAAS ION-IMPLANTED LAYERS

被引：31

作者：

ZAMMIT, U ^{[1
]}

MARINELLI, M ^{[1
]}

SCUDIERI, F ^{[1
]}

MARTELLUCCI, S ^{[1
]}

机构：

[1] CNR,NAZL ELETTRON QUANTIST & PLASMI GRP,I-00185 ROMA,ITALY

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 13期

关键词：

D O I：

10.1063/1.98058

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：830 / 832

页数：3

共 14 条

[1] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797

[2] PHASE-TRANSITIONS IN AMORPHOUS SI PRODUCED BY RAPID HEATING [J].

BAERI, P ;

FOTI, G ;

POATE, JM ;

CULLIS, AG .

PHYSICAL REVIEW LETTERS, 1980, 45 (25) :2036-2039

[3]

BEER R, 1967, SEMICONDUCTORS SEMIM, V3, P134

[4] ORIENTATION DEPENDENCE OF HIGH-SPEED SILICON CRYSTAL-GROWTH FROM THE MELT [J].

CULLIS, AG ;

CHEW, NG ;

WEBBER, HC ;

SMITH, DJ .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (02) :624-638

[5]

CULLIS AG, 1978, APPL PHYS LETT, V32, P139

[6] CALORIMETRIC STUDIES OF CRYSTALLIZATION AND RELAXATION OF AMORPHOUS SI AND GE PREPARED BY ION-IMPLANTATION [J].

DONOVAN, EP ;

SPAEPEN, F ;

TURNBULL, D ;

POATE, JM ;

JACOBSON, DC .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :1795-1804

[7]

MANDELIS A, 1979, J APPL PHYS, V50, P718

[8]

Meyer J., 1980, J PHYS C SOLID STATE, V41, pC4

[9]

MOSS ST, 1980, HDB SEMICONDUCTORS, V3, P771

[10] THEORY OF PHOTOACOUSTIC EFFECT WITH SOLIDS [J].

ROSENCWAIG, A ;

GERSHO, A .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (01) :64-69

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