ORIENTATION DEPENDENCE OF HIGH-SPEED SILICON CRYSTAL-GROWTH FROM THE MELT

[1] [Anonymous], 1982, LASER ANNEALING SEMI

[2] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 788 - 797

[3] PHASE-TRANSITIONS IN AMORPHOUS SI PRODUCED BY RAPID HEATING [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (25) : 2036 - 2039

[4] Bagley B.G., 1979, AIP CONF P, V50, P97, DOI [10.1063/1.31740, DOI 10.1063/1.31740]

[5] CRYSTALLIZATION RATES OF A LENNARD-JONES LIQUID [J]. PHYSICAL REVIEW LETTERS, 1982, 49 (20) : 1496 - 1500

[6] CATTO CJD, 1982, INST PHYS CONF SER, P123

[7] AMORPHIZATION OF GERMANIUM, GALLIUM-PHOSPHIDE, AND GALLIUM-ARSENIDE BY LASER QUENCHING FROM THE MELT [J]. APPLIED PHYSICS LETTERS, 1983, 42 (10) : 875 - 877

[8] MODULATED STRUCTURES AND METASTABLE DOPANT CONCENTRATIONS IN SILICON ANNEALED WITH Q-SWITCHED LASER-PULSES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 272 - 277

[9] TRANSITIONS TO DEFECTIVE CRYSTAL AND THE AMORPHOUS STATE INDUCED IN ELEMENTAL SI BY LASER QUENCHING [J]. PHYSICAL REVIEW LETTERS, 1982, 49 (03) : 219 - 222

[10] ULTRARAPID CRYSTAL-GROWTH AND IMPURITY SEGREGATION IN AMORPHOUS-SILICON ANNEALED WITH SHORT Q-SWITCHED LASER-PULSES [J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 998 - 1000

[1] [Anonymous], 1982, LASER ANNEALING SEMI

[2] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 788 - 797

[3] PHASE-TRANSITIONS IN AMORPHOUS SI PRODUCED BY RAPID HEATING [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (25) : 2036 - 2039

[4] Bagley B.G., 1979, AIP CONF P, V50, P97, DOI [10.1063/1.31740, DOI 10.1063/1.31740]

[5] CRYSTALLIZATION RATES OF A LENNARD-JONES LIQUID [J]. PHYSICAL REVIEW LETTERS, 1982, 49 (20) : 1496 - 1500

[6] CATTO CJD, 1982, INST PHYS CONF SER, P123

[7] AMORPHIZATION OF GERMANIUM, GALLIUM-PHOSPHIDE, AND GALLIUM-ARSENIDE BY LASER QUENCHING FROM THE MELT [J]. APPLIED PHYSICS LETTERS, 1983, 42 (10) : 875 - 877

[8] MODULATED STRUCTURES AND METASTABLE DOPANT CONCENTRATIONS IN SILICON ANNEALED WITH Q-SWITCHED LASER-PULSES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 272 - 277

[9] TRANSITIONS TO DEFECTIVE CRYSTAL AND THE AMORPHOUS STATE INDUCED IN ELEMENTAL SI BY LASER QUENCHING [J]. PHYSICAL REVIEW LETTERS, 1982, 49 (03) : 219 - 222

[10] ULTRARAPID CRYSTAL-GROWTH AND IMPURITY SEGREGATION IN AMORPHOUS-SILICON ANNEALED WITH SHORT Q-SWITCHED LASER-PULSES [J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 998 - 1000