ORIENTATION DEPENDENCE OF HIGH-SPEED SILICON CRYSTAL-GROWTH FROM THE MELT

被引:62
作者
CULLIS, AG
CHEW, NG
WEBBER, HC
SMITH, DJ
机构
[1] Univ Cambridge, Dept Met, High Resolution Electron Microscope, Cambridge CB2 3BZ, ENGLAND
[2] Royal Signals & Radar Estab, Malvern WR14 3PS, Worcs, ENGLAND
关键词
D O I
10.1016/0022-0248(84)90469-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:624 / 638
页数:15
相关论文
共 26 条
  • [21] SPAEPEN F, 1982, LASER ANNEALING SEMI, pCH2
  • [22] SILICON MELT, REGROWTH, AND AMORPHIZATION VELOCITIES DURING PULSED LASER IRRADIATION
    THOMPSON, MO
    MAYER, JW
    CULLIS, AG
    WEBBER, HC
    CHEW, NG
    POATE, JM
    JACOBSON, DC
    [J]. PHYSICAL REVIEW LETTERS, 1983, 50 (12) : 896 - 899
  • [23] MELTING TEMPERATURE AND EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-SILICON DURING PULSED LASER IRRADIATION
    THOMPSON, MO
    GALVIN, GJ
    MAYER, JW
    PEERCY, PS
    POATE, JM
    JACOBSON, DC
    CULLIS, AG
    CHEW, NG
    [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (26) : 2360 - 2363
  • [24] ORDER-DISORDER TRANSITION IN SINGLE-CRYSTAL SILICON INDUCED BY PULSED UV LASER IRRADIATION
    TSU, R
    HODGSON, RT
    TAN, TY
    BAGLIN, JE
    [J]. PHYSICAL REVIEW LETTERS, 1979, 42 (20) : 1356 - 1358
  • [25] ON THE GROWTH OF GERMANIUM DENDRITES
    WAGNER, RS
    [J]. ACTA METALLURGICA, 1960, 8 (01): : 57 - 60
  • [26] COMPUTER-SIMULATION OF HIGH-SPEED MELTING OF AMORPHOUS-SILICON
    WEBBER, HC
    CULLIS, AG
    CHEW, NG
    [J]. APPLIED PHYSICS LETTERS, 1983, 43 (07) : 669 - 671