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MODULATED STRUCTURES AND METASTABLE DOPANT CONCENTRATIONS IN SILICON ANNEALED WITH Q-SWITCHED LASER-PULSES

被引：3
作者：
CULLIS, AG
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期
关键词：
D O I：
10.1116/1.582501
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：272 / 277
页数：6
相关论文
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