MODULATED STRUCTURES AND METASTABLE DOPANT CONCENTRATIONS IN SILICON ANNEALED WITH Q-SWITCHED LASER-PULSES

被引:3
作者
CULLIS, AG
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期
关键词
D O I
10.1116/1.582501
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:272 / 277
页数:6
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