AMORPHIZATION OF GERMANIUM, GALLIUM-PHOSPHIDE, AND GALLIUM-ARSENIDE BY LASER QUENCHING FROM THE MELT

被引：15

作者：

CULLIS, AG

WEBBER, HC

CHEW, NG

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 10期

关键词：

D O I：

10.1063/1.93798

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：875 / 877

页数：3

共 18 条

[1] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797

[2] OHMIC CONTACTS PRODUCED BY LASER-ANNEALING TE-IMPLANTED GAAS [J].

BARNES, PA ;

LEAMY, HJ ;

POATE, JM ;

FERRIS, SD ;

WILLIAMS, JS ;

CELLER, GK .

APPLIED PHYSICS LETTERS, 1978, 33 (11) :965-967

[3]

Cullis A. G., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P131

[4] TEM STUDY OF SILICON LASER ANNEALED AFTER THE IMPLANTATION OF LOW SOLUBILITY DOPANTS [J].

CULLIS, AG ;

WEBBER, HC ;

POATE, JM ;

CHEW, NG .

JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (JAN) :41-49

[5] TRANSITIONS TO DEFECTIVE CRYSTAL AND THE AMORPHOUS STATE INDUCED IN ELEMENTAL SI BY LASER QUENCHING [J].

CULLIS, AG ;

WEBBER, HC ;

CHEW, NG ;

POATE, JM ;

BAERI, P .

PHYSICAL REVIEW LETTERS, 1982, 49 (03) :219-222

[6] ULTRARAPID CRYSTAL-GROWTH AND IMPURITY SEGREGATION IN AMORPHOUS-SILICON ANNEALED WITH SHORT Q-SWITCHED LASER-PULSES [J].

CULLIS, AG ;

WEBBER, HC ;

CHEW, NG .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :998-1000

[7] SEGREGATION AND INCREASED DOPANT SOLUBILITY IN PT-IMPLANTED AND LASER-ANNEALED SI LAYERS [J].

CULLIS, AG ;

WEBBER, HC ;

POATE, JM ;

SIMONS, AL .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :320-322

[8] GROWTH INTERFACE BREAKDOWN DURING LASER RECRYSTALLIZATION FROM THE MELT [J].

CULLIS, AG ;

HURLE, DTJ ;

WEBBER, HC ;

CHEW, NG ;

POATE, JM ;

BAERI, P ;

FOTI, G .

APPLIED PHYSICS LETTERS, 1981, 38 (08) :642-644

[9]

Gilmer G. H., 1980, LASER ELECTRON BEAM, P227

[10]

HURLE DTJ, UNPUB J CRYST GROWTH

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