WARM-CARRIER DC TRANSPORT IN SI

被引:15
作者
HOLMKENN.JW
机构
关键词
D O I
10.1063/1.1661412
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1878 / &
相关论文
共 21 条
[11]   WARM-CARRIER MICROWAVE TRANSPORT IN SI [J].
HOLMKENN.JW ;
CHAMPLIN, KS .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1889-&
[12]   CONDUCTIVITY ANISOTROPY OF N-TYPE SILICON IN RANGE OF WARM AND HOT CARRIERS [J].
KASTNER, P ;
ROTH, EP ;
SEEGER, K .
ZEITSCHRIFT FUR PHYSIK, 1965, 187 (04) :359-&
[13]   SELECTION RULES CONNECTING DIFFERENT POINTS IN BRILLOUIN ZONE [J].
LAX, M ;
HOPFIELD, JJ .
PHYSICAL REVIEW, 1961, 124 (01) :115-&
[14]   SCATTERING OF CONDUCTION ELECTRONS BY LATTICE VIBRATIONS IN SILICON [J].
LONG, D .
PHYSICAL REVIEW, 1960, 120 (06) :2024-2032
[15]   HALL MOBILITY AND CARRIER REPOPULATION OF N-TYPE SILICON AT HIGH ELECTRIC FIELDS [J].
NAG, BR ;
PARIA, H ;
BASU, PK .
PHYSICS LETTERS A, 1968, A 28 (03) :202-&
[16]   ANISOTROPY OF CONDUCTIVITY OF N-TYPE GERMANIUM AT HIGH ELECTRIC FIELDS [J].
NATHAN, MI .
PHYSICAL REVIEW, 1963, 130 (06) :2201-&
[17]   EVIDENCE OF INTERVALLEY SCATTERING OF ELECTRONS IN EXTRINSIC PHOTOCONDUCTIVITY OF N-TYPE SILICON [J].
ONTON, A .
PHYSICAL REVIEW LETTERS, 1969, 22 (07) :288-&
[18]  
PAIGE EGS, 1960, P PHYS SOC LONDON, V375, P174
[19]   DRIFT VELOCITY AND ANISOTROPY OF HOT ELECTRONS IN N GERMANIUM [J].
REIK, HG ;
RISKEN, H .
PHYSICAL REVIEW, 1962, 126 (05) :1737-&
[20]   ANISOTROPY OF CONDUCTIVITY OF N-TYPE GERMANIUM IN STRONG D.C. FIELDS [J].
SCHWEITZER, D ;
SEEGER, K .
ZEITSCHRIFT FUR PHYSIK, 1965, 183 (02) :207-+