MEDIUM-ENERGY ION-SCATTERING STUDY OF A POSSIBLE RELATION BETWEEN THE SCHOTTKY-BARRIER HEIGHT AND THE DEFECT DENSITY AT NISI2/SI(111) INTERFACES

被引：29

作者：

VRIJMOETH, J ^{[1
]}

VANDERVEEN, JF ^{[1
]}

HESLINGA, DR ^{[1
]}

KLAPWIJK, TM ^{[1
]}

机构：

[1] STATE UNIV GRONINGEN, DEPT APPL PHYS, 9747 AG GRONINGEN, NETHERLANDS

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.42.9598

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the electrical properties of both orientations of the NiSi2/Si(111) interface in relation to the atomic structure at the very interface. The flat-band Schottky-barrier heights corresponding to the A- and B-type oriented silicides are shown to be 0.65 and 0.81 eV, respectively, in agreement with the literature. Measurements using medium-energy ion scattering show that the concentrations of atoms displaced from lattice sites at the A- and B-type oriented NiSi2/Si(111) interfaces are smaller than 1×1013 Si atoms cm-2 and 3×1013 Si atoms cm-2, respectively, ruling out the possibility that the difference in Schottky-barrier height is caused by defects. The difference should therefore be intrinsically related to the interfacial atomic geometry. © 1990 The American Physical Society.

引用

页码：9598 / 9608

页数：11

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