PRECIPITATION AT GRAIN-BOUNDARIES IN SILICON

被引：9

作者：

HAMET, JF

ABDELAOUI, R

NOUET, G

ALLAIS, G

机构：

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 4卷 / 1-4期

关键词：

D O I：

10.1016/0921-5107(89)90231-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：143 / 145

页数：3

共 12 条

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