SURFACE-DIFFUSION OF AL ATOMS ON GAAS VICINAL SURFACES IN MOLECULAR-BEAM EPITAXY

被引：14

作者：

TANAKA, M

SUZUKI, T

NISHINAGA, T

机构：

[1] Department of Electronic Engineering, The University of Tokyo, Bunkyo-ku, Tokyo, 113

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 05期

关键词：

Al atoms; GaAs vicinal surface; Molecular beam epitaxy; Step-flow; Supersaturation; Surface diffusion; ZD-nucleation;

D O I：

10.1143/JJAP.29.L706

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the surface diffusion in molecular beam epitaxial growth of AlAs on GaAs vicinal surfaces by observing intensity oscillations of reflection high-energy electron diffraction (RHEED). By measuring the critical temperature where the RHEED oscillation begins to appear, the critical condition for the growth mode transition was determined. Combining the experimental results with the theory taking into account the surface diffusion and supersaturation ratio of adatoms on the terraces, the surface diffusion length of Al atoms is estimated and compared with that of GaAs. © 1990 The Japan Society of Applied Physics.

引用

页码：L706 / L708

页数：3

共 13 条

[1] SUPERLATTICE STRUCTURE OBSERVATION FOR (ALAS)1/2(GAAS)1/2 GROWN ON (001) VICINAL GAAS SUBSTRATES [J].