ANISOTROPIC TRANSPORT AND NONPARABOLIC MINIBAND IN A NOVEL INPLANE SUPERLATTICE CONSISTING OF A GRID-INSERTED SELECTIVELY DOPED HETEROJUNCTION

被引：39

作者：

MOTOHISA, J ^{[1
]}

TANAKA, M ^{[1
]}

SAKAKI, H ^{[1
]}

机构：

[1] UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 12期

关键词：

D O I：

10.1063/1.101658

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1214 / 1216

页数：3

共 19 条

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[6] MOLECULAR-BEAM EPITAXY GROWTH OF TILTED GAAS ALAS SUPERLATTICES BY DEPOSITION OF FRACTIONAL MONOLAYERS ON VICINAL (001) SUBSTRATES
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[7] MOBILITY OF THE TWO-DIMENSIONAL ELECTRON-GAS AT SELECTIVITY DOPED N-TYPE ALXGA1-XAS/GAAS HETEROJUNCTIONS WITH CONTROLLED ELECTRON CONCENTRATIONS
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[8] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10): : L868 - L870
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[J]. APPLIED PHYSICS LETTERS, 1989, 54 (05) : 460 - 462
[10] THE TWO-DIMENSIONAL ELECTRON-GAS SUBJECT TO A WEAK PERIODIC POTENTIAL
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (34): : 6341 - 6353

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