THERMODYNAMIC ANALYSIS OF MOLECULAR-BEAM EPITAXY OF III-V-SEMICONDUCTORS

被引:102
作者
SEKI, H
KOUKITU, A
机构
关键词
D O I
10.1016/0022-0248(86)90070-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
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页码:342 / 352
页数:11
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共 27 条
[1]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP ON (100) GAAS [J].
ASAHI, H ;
KAWAMURA, Y ;
NAGAI, H .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4928-4931
[2]   MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J].
CHANG, CA ;
LUDEKE, R ;
CHANG, LL ;
ESAKI, L .
APPLIED PHYSICS LETTERS, 1977, 31 (11) :759-761
[3]   INCORPORATION RATES OF GALLIUM AND ALUMINUM ON GAAS DURING MOLECULAR-BEAM EPITAXY AT HIGH SUBSTRATE TEMPERATURES [J].
FISCHER, R ;
KLEM, J ;
DRUMMOND, TJ ;
THORNE, RE ;
KOPP, W ;
MORKOC, H ;
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2508-2510
[4]   SURFACE PROCESSES CONTROLLING GROWTH OF GAXIN1-XAS AND GAXIN1-XP ALLOY-FILMS BY MBE [J].
FOXON, CT ;
JOYCE, BA .
JOURNAL OF CRYSTAL GROWTH, 1978, 44 (01) :75-83
[5]  
GONDA S, 1976, J APPL PHYS, V47, P4198, DOI 10.1063/1.323288
[6]   THERMODYNAMIC ASPECTS OF MOLECULAR-BEAM EPITAXY - HIGH-TEMPERATURE GROWTH IN THE GAAS/GA1-XALXAS SYSTEM [J].
HECKINGBOTTOM, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :572-575
[7]   MOLECULAR-BEAM EPITAXY OF IN1-XGAXASYP1-Y(Y CONGRUENT-TO 2.2 X) LATTICE MATCHED TO INP USING GAS CELLS [J].
HUET, D ;
LAMBERT, M .
JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (01) :37-40
[8]   PREFERENTIAL DESORPTION OF GA FROM ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
KAWABE, M ;
MATSUURA, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06) :L351-L353
[9]   MBE GROWTH OF HIGH-QUALITY INP USING TRIETHYLINDIUM AS AN INDIUM SOURCE [J].
KAWAGUCHI, Y ;
ASAHI, H ;
NAGAI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (09) :L737-L739
[10]   THERMODYNAMIC ANALYSIS OF THE MOVPE GROWTH-PROCESS [J].
KOUKITU, A ;
SUZUKI, T ;
SEKI, H .
JOURNAL OF CRYSTAL GROWTH, 1986, 74 (01) :181-186