共 27 条
[5]
GONDA S, 1976, J APPL PHYS, V47, P4198, DOI 10.1063/1.323288
[6]
THERMODYNAMIC ASPECTS OF MOLECULAR-BEAM EPITAXY - HIGH-TEMPERATURE GROWTH IN THE GAAS/GA1-XALXAS SYSTEM
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1985, 3 (02)
:572-575
[8]
PREFERENTIAL DESORPTION OF GA FROM ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1984, 23 (06)
:L351-L353
[9]
MBE GROWTH OF HIGH-QUALITY INP USING TRIETHYLINDIUM AS AN INDIUM SOURCE
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1984, 23 (09)
:L737-L739