THERMODYNAMIC ANALYSIS OF THE MOVPE GROWTH-PROCESS

被引：21

作者：

KOUKITU, A

SUZUKI, T

SEKI, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 74卷 / 01期

关键词：

D O I：

10.1016/0022-0248(86)90262-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：181 / 186

页数：6

共 21 条

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[3]

Gottschalch V., 1974, Kristall und Technik, V9, P209, DOI 10.1002/crat.19740090304

[4]

HALLAIS JP, 1978, ACTA ELECTRON, V21, P129

[5]

Hirtz J. P., 1982, GaInAsP alloy semiconductors, P61

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HSU, CC ;

COHEN, RM ;

STRINGFELLOW, GB .

JOURNAL OF CRYSTAL GROWTH, 1983, 63 (01) :8-12

[7] PROPERTIES OF EPITAXIAL GALLIUM-ARSENIDE FROM TRIMETHYLGALLIUM AND ARSINE [J].

ITO, S ;

SHINOHARA, T ;

SEKI, Y .

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[8] THERMODYNAMIC ANALYSIS FOR INGAASP EPITAXIAL-GROWTH BY THE CHLORIDE-CVD PROCESS [J].

KOUKITU, A ;

SEKI, H .

JOURNAL OF CRYSTAL GROWTH, 1980, 49 (02) :325-333

[9] A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY [J].

LEYS, MR ;

VEENVLIET, H .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :145-153

[10] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS [J].

MANASEVIT, HM ;

SIMPSON, WI .

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