ORGANOMETALLIC VPE GROWTH OF INAS1-X-YSBXPY ON INAS

InAs//1// minus //x// minus //ySb//xP//y quaternary alloy lattice matched to InAs was successfully grown by organometallic vapor phase epitaxial growth. In a fairly wide composition range (0 less than equivalent to x plus y less than equivalent to 0. 7) the grown quaternary layer exhibited a mirror-smooth surface and a sharp X-ray diffraction spectrum. Full widths of half-maximum of X-ray rocking curve were 20 - 30 double prime . The growth rate is limited by the mass transport of indium. The miscibility gap extent was found in the low arsenic composition region (x plus y greater than 0. 7). The band gap energy of the quaternary layer lattice matched to InAs was obtained from photoresponse measurements. The bowing parameter for the band gap energy of the InSb//xP//1// minus //x mixed crystal system is estimated to be 1. 6 plus or minus 0. 3 ev.