IMPURITY CONDUCTION IN SILICON

[11] EFFECT OF MINORITY IMPURITIES ON IMPURITY CONDUCTION IN P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1959, 113 (04): : 999 - 1001

[12] RESISTIVITY AND HALL COEFFICIENT OF ANTIMONY-DOPED GERMANIUM AT LOW TEMPERATURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (01) : 69 - 80

[13] ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1955, 99 (02): : 406 - 419

[14] THE ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J]. PHYSICA, 1954, 20 (10): : 834 - 844

[15] INTERACTIONS BETWEEN OXYGEN AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) : 1264 - 1265

[16] FULLER CS, 1954, PHYS REV, V96, P833

[17] INTERACTIONS BETWEEN SOLUTES IN GERMANIUM AND SILICON [J]. CHEMICAL REVIEWS, 1959, 59 (01) : 65 - 87

[18] EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1427 - 1436

[19] Gudden B., 1935, Z TECH PHYS, V16, P323

[20] HANNAY NB, 1959, SEMICONDUCTORS AMERI, P217

[11] EFFECT OF MINORITY IMPURITIES ON IMPURITY CONDUCTION IN P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1959, 113 (04): : 999 - 1001

[12] RESISTIVITY AND HALL COEFFICIENT OF ANTIMONY-DOPED GERMANIUM AT LOW TEMPERATURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (01) : 69 - 80

[13] ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1955, 99 (02): : 406 - 419

[14] THE ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J]. PHYSICA, 1954, 20 (10): : 834 - 844

[15] INTERACTIONS BETWEEN OXYGEN AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) : 1264 - 1265

[16] FULLER CS, 1954, PHYS REV, V96, P833

[17] INTERACTIONS BETWEEN SOLUTES IN GERMANIUM AND SILICON [J]. CHEMICAL REVIEWS, 1959, 59 (01) : 65 - 87

[18] EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1427 - 1436

[19] Gudden B., 1935, Z TECH PHYS, V16, P323

[20] HANNAY NB, 1959, SEMICONDUCTORS AMERI, P217