OBSERVATION OF RADIATIVE SURFACE-STATES ON INP

被引：15

作者：

KIM, TS

LESTER, SD

STREETMAN, BG

机构：

来源：

关键词：

D O I：

10.1063/1.338009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2072 / 2074

页数：3

共 12 条

[1] CASEY HC, 1977, APPL PHYS LETT, V30, P274
[2] RADIATIVE LIFETIMES OF DONOR-ACCEPTOR PAIRS IN P-TYPE GALLIUM ARSENIDE
DINGLE, R
[J]. PHYSICAL REVIEW, 1969, 184 (03): : 788 - &
[3] FISHBACH JU, 1972, SOLID STATE COMMUN, V11, P725
[4] AMBIENT-INDUCED SURFACE EFFECTS ON INP AND GAAS
LESTER, SD
KIM, TS
STREETMAN, BG
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (12) : 4209 - 4214
[5] OBERSTAR JD, 1981, SURF SCI, V108, pL470, DOI 10.1016/0039-6028(81)90556-2
[6] ANNEALING ENCAPSULANTS FOR INP .2. PHOTO-LUMINESCENCE STUDIES
OBERSTAR, JD
STREETMAN, BG
[J]. THIN SOLID FILMS, 1982, 94 (02) : 161 - 170
[7] UNPINNED (100) GAAS-SURFACES IN AIR USING PHOTOCHEMISTRY
OFFSEY, SD
WOODALL, JM
WARREN, AC
KIRCHNER, PD
CHAPPELL, TI
PETTIT, GD
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (07) : 475 - 477
[8] RESIDUAL DONORS AND ACCEPTORS IN HIGH-PURITY GAAS AND INP GROWN BY HYDRIDE VPE
SKROMME, BJ
LOW, TS
ROTH, TJ
STILLMAN, GE
KENNEDY, JK
ABROKWAH, JK
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) : 433 - 457
[9] PHOTOLUMINESCENCE IDENTIFICATION OF THE C AND BE ACCEPTOR LEVELS IN INP
SKROMME, BJ
STILLMAN, GE
OBERSTAR, JD
CHAN, SS
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (03) : 463 - 491
[10] INFLUENCE OF THE SURFACE ON PHOTO-LUMINESCENCE FROM INDIUM-PHOSPHIDE CRYSTALS
STREET, RA
WILLIAMS, RH
BAUER, RS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1001 - 1004