LOW-TEMPERATURE ELECTRONIC TRANSPORT IN NON-CRYSTALLINE SEMICONDUCTORS

被引：36

作者：

FRITZSCHE, H

机构：

来源：

关键词：

D O I：

10.1016/0022-3093(89)90052-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1 / 6

页数：6

共 17 条

[1] ADLER D, 1985, PHYSICS DISORDERED M, P287
[2] BARANOVSKII SD, IN PRESS
[3] LOW-TEMPERATURE ELECTRON-TRANSPORT NEAR THE MOBILITY EDGE OF AMORPHOUS-SILICON
CLOUDE, C
SPEAR, WE
LECOMBER, PG
HOURD, AC
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 54 (04): : L113 - L118
[4] DRIFT-MOBILITY MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS USING TRAVELING-WAVE METHOD
FRITZSCHE, H
CHEN, KJ
[J]. PHYSICAL REVIEW B, 1983, 28 (08): : 4900 - 4902
[5] ANALYSIS OF THE TRAVELING-WAVE TECHNIQUE FOR MEASURING MOBILITIES IN LOW-CONDUCTIVITY SEMICONDUCTORS
FRITZSCHE, H
[J]. PHYSICAL REVIEW B, 1984, 29 (12): : 6672 - 6678
[6] PHOTOCONDUCTIVITY AND PHOTOLUMINESCENCE OF A-SI-H AT LOW-TEMPERATURE
HOHEISEL, M
CARIUS, R
FUHS, W
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 63 (03) : 313 - 319
[7] UNIVERSAL BEHAVIOR OF THE NORMALIZED PHOTOCONDUCTIVITY AT LOW-TEMPERATURES IN AMORPHOUS-SEMICONDUCTORS
JOHANSON, RE
FRITZSCHE, H
VOMVAS, A
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 : 274 - 276
[8] JOHANSON RE, IN PRESS
[9] OPTICALLY INDUCED FREQUENCY-DEPENDENT LOSS IN HYDROGENATED AMORPHOUS-SILICON
LONG, AR
ANDERSON, MJ
SHIMAKAWA, K
IMAGAWA, O
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1988, 21 (36): : L1199 - L1204
[10] HOPPING IN EXPONENTIAL BAND TAILS
MONROE, D
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (02) : 146 - 149