KINETICS AND MECHANISMS OF SURFACE-REACTIONS IN EPITAXIAL-GROWTH OF SI FROM SIH4 AND SI2H6

被引：22

作者：

GATES, SM

机构：

[1] IBM Thomas J. Watson Research Center, Yorktown Heights

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 120卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90401-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Surface science and kinetic modelling studies of the surface chemical mechanisms active during low pressure chemical vapor deposition (CVD) and chemical beam epitaxy (CBE) growth of Si from mono- and disilane are summarized. Time-of-flight direct recoiling (DR) is discussed as an in situ method to analyze the composition of the growth interface. Steady state measurements of surface hydrogen coverage (theta(H)) are made by DR in situ during CBE Si growth from Si2H6 and SiH4, and are illustrated here. Key results using other experimental methods are briefly discussed.

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页码：269 / 274

页数：6

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