DUAL-MODE REFLECTOMETER FOR MEASURING MICROWAVE MAGNETIC KERR EFFECT IN SEMICONDUCTORS

被引：9

作者：

HAUGE, PS

CHAMPLIN, KS

机构：

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1967年 / MT15卷 / 07期

关键词：

D O I：

10.1109/TMTT.1967.1126488

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：406 / &

共 13 条

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BRODWIN, ME ;

VERNON, RJ .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1963, 34 (10) :1129-&

[2] FREE-CARRIER MAGNETO-MICROWAVE KERR EFFECT IN SEMICONDUCTORS [J].

BRODWIN, ME ;

VERNON, RJ .

PHYSICAL REVIEW, 1965, 140 (4A) :1390-&

[3]

BRODWIN ME, 1961, B AM PHYS SOC, V6, P427

[4] CHARGE CARRIER INERTIA IN SEMICONDUCTORS [J].

CHAMPLIN, KS ;

ARMSTRONG, DB ;

GUNDERSON, PD .

PROCEEDINGS OF THE IEEE, 1964, 52 (06) :677-+

[5]

CHAMPLIN KS, 1963, IEEE T MICROWAVE THE, VMT11, P73

[6] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J].

DEBYE, PP ;

CONWELL, EM .

PHYSICAL REVIEW, 1954, 93 (04) :693-706

[7]

ENGEN GF, 1959, IRE T MICROWAVE THEO, VMTT7, P351

[8]

Faraday M., 1846, LONDON EDINBURGH DUB, V29, P249

[9] MICROWAVE FARADAY EFFECT IN SILICON AND GERMANIUM [J].

FURDYNA, JK ;

BROERSMA, S .

PHYSICAL REVIEW, 1960, 120 (06) :1995-2003

[10]

HENSPERGER ES, 1959, MICROWAVE J, V2, P38

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