AN ADVANCED SINGLE-LEVEL POLYSILICON SUBMICROMETER BICMOS TECHNOLOGY

被引：11

作者：

BRASSINGTON, MP ^{[1
]}

ELDIWANY, MH ^{[1
]}

RAZOUK, RR ^{[1
]}

THOMAS, ME ^{[1
]}

TUNTASOOD, PT ^{[1
]}

机构：

[1] NATL SEMICOND CORP,FAIRCHILD RES CTR,SANTA CLARA,CA 95052

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 04期

关键词：

D O I：

10.1109/16.22476

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：712 / 719

页数：8

相关论文

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