NUMERICAL STUDY OF COHERENT TUNNELING IN A DOUBLE-BARRIER STRUCTURE

被引：11

作者：

JOOSTEN, HP

NOTEBORN, HJMF

LENSTRA, D

机构：

[1] Department of Physics, Eindhoven University of Technology, 5600 MB Eindhoven

来源：

THIN SOLID FILMS | 1990年 / 184卷

关键词：

D O I：

10.1016/0040-6090(90)90414-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a transparent and simple theory describing coherent transport of charge carriers through a double-barrier resonant tunnelling structure, including charge build-up in a self-consistent way. Numerical analysis of this model gives I-V characteristics showing negative differential resistance (ndr) and an intrinsic bistability in the ndr region of the curve. We show that it is the charge storage within the quantum well from which the intrinsic bistability results. © 1990.

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页码：199 / 206

页数：8

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