STUDY OF MILLIMETER-WAVE GAAS IMPATT OSCILLATOR AND AMPLIFIER NOISE

被引:9
作者
WELLER, KP [1 ]
机构
[1] RCA LABS,PRINCETON,NJ 08540
关键词
D O I
10.1109/T-ED.1973.17691
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:517 / 521
页数:5
相关论文
共 22 条
[11]   NOISE SPECTRA OF READ DIODE AND GUNN OSCILLATORS [J].
JOSENHANS, J .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10) :1478-+
[12]  
LEE TP, 1968, IEEE T ELECTRON DEV, VED15, P741
[13]   COMPARATIVE STUDY OF IMPATT DIODE NOISE PROPERTIES [J].
LEVINE, PA ;
CHAN, VW .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (06) :745-&
[14]  
MIDFORD TA, 1971, MICROWAVE J, V14, P34
[15]  
ONDRIA JG, 1968, IEEE T MICROWAVE THE, VMT16, P234
[16]   IMPROVED PERFORMANCE OF IMPATT DIODES FABRICATED FROM GE [J].
RULISON, RL ;
GIBBONS, G ;
JOSENHANS, JG .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (02) :223-+
[17]  
SCHERER EF, 1969, IEEE J SOLID STATE C, VSC 4, P396
[18]  
SCHERER EF, 1968, IEEE T MICROWAVE THE, VMT16, P781
[19]  
TATSUGUCHI I, 1971, 1971 P INT SOL STAT, P170
[20]   PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE [J].
TIETJEN, JJ ;
AMICK, JA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) :724-&