IN0.53GA0.47AS CONTACT LAYER FOR 1.3 UM LIGHT-EMITTING-DIODES

被引：9

作者：

TEMKIN, H

CHIN, AK

DIGIUSEPPE, MA

机构：

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 19期

关键词：

D O I：

10.1049/el:19810493

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：703 / 705

页数：3

共 8 条

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[5]

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[6]

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[7] LIQUID-PHASE EPITAXIAL IN1-XGAXASYP1-Y LATTICE MATCHED TO (100) INP OVER COMPLETE WAVELENGTH RANGE 0.92 GREATER-THAN-LAMBDA-EQUAL-TO-1.65 MU-M [J].

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APPLIED PHYSICS LETTERS, 1978, 33 (04) :314-316

[8] OHMIC CONTACTS TO PARA-TYPE INP USING BE-AU METALLIZATION [J].

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