FAST-NEUTRON EFFECTS ON GAASP SCHOTTKY-BARRIER DIODES AND HALL-EFFECT DEVICES

被引：4

作者：

NEAMEN, DA ^{[1
]}

GRANNEMANN, WW ^{[1
]}

机构：

[1] UNIV NEW MEXICO, ALBUQUERQUE, NM 87106 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1972年 / NS19卷 / 06期

关键词：

D O I：

10.1109/TNS.1972.4326835

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：215 / 219

页数：5

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