PROPERTIES OF A-SI1-XCX-H ALLOYS DEPOSITED IN THE HOT-PLASMA-BOX GLOW-DISCHARGE REACTOR

被引:9
作者
BHUSARI, DM [1 ]
DUSANE, RO [1 ]
KSHIRSAGAR, ST [1 ]
机构
[1] UNIV POONA,DEPT PHYS,POONA 411007,MAHARASHTRA,INDIA
关键词
D O I
10.1016/S0022-3093(05)80214-5
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The structural, electrical and optical properties of the a-Si:C:H alloy films grown with high deposition rates in the Hot Plasma Box (HPB) glow discharge reactor are reported. The electronic quality of these alloys is found to be equally good as that of grown with low deposition rates in the conventional open parallel plate glow discharge reactor.
引用
收藏
页码:689 / 692
页数:4
相关论文
共 10 条
[1]   ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE [J].
ANDERSON, DA ;
SPEAR, WE .
PHILOSOPHICAL MAGAZINE, 1977, 35 (01) :1-16
[2]   STRUCTURAL INFORMATION FROM THE RAMAN-SPECTRUM OF AMORPHOUS-SILICON [J].
BEEMAN, D ;
TSU, R ;
THORPE, MF .
PHYSICAL REVIEW B, 1985, 32 (02) :874-878
[3]  
BHGUSARI DM, 1991, THIN SOLID FILMS, V197, P215
[4]   OPTICAL CHARACTERIZATION OF AMORPHOUS-SILICON HYDRIDE FILMS [J].
CODY, GD ;
WRONSKI, CR ;
ABELES, B ;
STEPHENS, RB ;
BROOKS, B .
SOLAR CELLS, 1980, 2 (03) :227-243
[5]  
GUANGHUA C, 1983, SOL ENERG MATER, V7, P413
[6]   CHEMICAL BONDING STATES IN THE AMORPHOUS SIXC1-X-H SYSTEM STUDIED BY X-RAY PHOTOEMISSION SPECTROSCOPY AND INFRARED-ABSORPTION SPECTRA [J].
KATAYAMA, Y ;
USAMI, K ;
SHIMADA, T .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (02) :283-294
[7]   PRESENT AND FUTURE APPLICATIONS OF AMORPHOUS-SILICON AND ITS ALLOYS [J].
LECOMBER, PG .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 115 (1-3) :1-13
[8]   EVIDENCE FOR GRAPHITIC-TYPE BONDING IN GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON CARBON ALLOYS [J].
MAHAN, AH ;
VONROEDERN, B ;
WILLIAMSON, DL ;
MADAN, A .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2717-2720
[9]   A-SI-H DEPOSITION FROM SIH4 AND SI2H6 RF-DISCHARGES - PRESSURE AND TEMPERATURE-DEPENDENCE OF FILM GROWTH IN RELATION TO THE ALPHA-GAMMA DISCHARGE TRANSITION [J].
PERRIN, J ;
CABARROCAS, PRI ;
ALLAIN, B ;
FRIEDT, JM .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (11) :2041-2052
[10]   VIBRATIONAL-SPECTRUM OF HYDROGENATED AMORPHOUS SI-C FILMS [J].
WIEDER, H ;
CARDONA, M ;
GUARNIERI, CR .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 92 (01) :99-112