A-SI-H DEPOSITION FROM SIH4 AND SI2H6 RF-DISCHARGES - PRESSURE AND TEMPERATURE-DEPENDENCE OF FILM GROWTH IN RELATION TO THE ALPHA-GAMMA DISCHARGE TRANSITION

被引：95

作者：

PERRIN, J ^{[1
]}

CABARROCAS, PRI ^{[1
]}

ALLAIN, B ^{[1
]}

FRIEDT, JM ^{[1
]}

机构：

[1] CTR RECH CLAUDE DELORME,F-78350 JOUY EN JOSAS,FRANCE

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 11期

关键词：

D O I：

10.1143/JJAP.27.2041

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2041 / 2052

页数：12

共 46 条

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