EFFECT OF HIGH-ENERGETIC PARTICLES ON THIN-FILM GROWTH DUE TO THERMAL SPIKES

被引：2

作者：

BOBETH, M

POMPE, W

机构：

[1] Zentralinstitut Für Festkörperphysik Und Werkstofforschung, Akademie Der Wissenschaften Der Ddr, Dresden

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 117卷 / 01期

关键词：

21;

D O I：

10.1002/pssa.2211170120

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin film growth is governed by certain kinetic coefficients. The influence of thermal spikes from 10 to 1000 eV particles on film formation is estimated by calculating effective kinetic coefficients as spatiotemporal average over the arising fluctuating temperature field. Thermal spikes are found to activate growth kinetics considerably provided that particle energy and current density are sufficiently high, and the activation energy of kinetic processes exceeds a certain threshold Ec, typically Ec/kT ≈ 20. The effect is largest for particle energies ∼ 100 eV, depending on penetration depth. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：191 / 201

页数：11

共 22 条

[1] A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS
BIERSACK, JP
HAGGMARK, LG
[J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2): : 257 - 269
[2] SPUTTERING STUDIES WITH THE MONTE-CARLO PROGRAM TRIM.SP
BIERSACK, JP
ECKSTEIN, W
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (02): : 73 - 94
[3] ATOMISTIC SIMULATION OF SILICON BEAM DEPOSITION
DODSON, BW
[J]. PHYSICAL REVIEW B, 1987, 36 (02): : 1068 - 1074
[4] Dubowski J. J., 1988, Chemtronics, V3, P66
[5] A REVIEW OF THE PRESENT UNDERSTANDING OF THE ROLE OF ION SURFACE INTERACTIONS AND PHOTOINDUCED REACTIONS DURING VAPOR-PHASE CRYSTAL-GROWTH
GREENE, JE
MOTOOKA, T
SUNDGREN, JE
ROCKETT, A
GORBATKIN, S
LUBBEN, D
BARNETT, SA
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) : 19 - 32
[6] GUSEV OV, 1979, FIZ KHIM OBRABOTKI M, V5, P51
[7] LOW-TEMPERATURE SILICON EPITAXY BY PARTIALLY IONIZED VAPOR-DEPOSITION
ITOH, T
NAKAMURA, T
MUROMACHI, M
SUGIYAMA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (04) : 553 - 557
[8] THERMAL EFFECTS IN SPUTTERING
KELLY, R
[J]. SURFACE SCIENCE, 1979, 90 (02) : 280 - 318
[9] EFFECT OF ION-BOMBARDMENT ON INITIAL-STAGES OF THIN-FILM GROWTH
MARINOV, M
[J]. THIN SOLID FILMS, 1977, 46 (03) : 267 - 274
[10] Matthews J.W, 1975, EPITAXIAL GROWTH

← 1 2 3 →