IN(O-BULLET-1)GA(0-BULLET-9)AS/GAAS/ALAS PSEUDOMORPHIC RESONANT TUNNELING DIODES INTEGRATED WITH AIRBRIDGE

被引：5

作者：

LHEURETTE, E ^{[1
]}

GRIMBERT, B ^{[1
]}

FRANCOIS, M ^{[1
]}

TILMANT, P ^{[1
]}

LIPPENS, D ^{[1
]}

NAGLE, J ^{[1
]}

VINTER, B ^{[1
]}

机构：

[1] THOMSON CSF,CENT RECH LAB,F-91404 ORSAY,FRANCE

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 10期

关键词：

DIODES; TUNNEL DIODES; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19920593

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication of an airbridged low parasitic resonant tunnelling diode is described. The devices were fabricated from strained In0.1Ga0.9As/GaAs/AlAs layers. They yielded excellent DC characteristics with simultaneously high peak-to-valley current ratios of 7:1 and peak current of 50kA/cm2 at 300K. RF measurements up to 40GHz showed that the total parasitic capacitance was 0.013pF.

引用

页码：937 / 938

页数：2

共 5 条

[1]

BRUGGER H, 1991, 13TH IEEE CORN C ADV

[2] HIGHLY STRAINED GAAS/INGAAS/ALAS RESONANT TUNNELING DIODES WITH SIMULTANEOUSLY HIGH PEAK CURRENT DENSITIES AND PEAK-TO-VALLEY RATIOS AT ROOM-TEMPERATURE [J].