A COMPREHENSIVE MODEL FOR COULOMB SCATTERING IN INVERSION-LAYERS

被引：81

作者：

GAMIZ, F

LOPEZVILLANUEVA, JA

JIMENEZTEJADA, JA

MELCHOR, I

PALMA, A

机构：

[1] Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Facultad de Ciencias, 18071 Granada, Avda. Fuentenueva

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 02期

关键词：

D O I：

10.1063/1.356448

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A comprehensive model for Coulomb scattering in inversion layers is presented. This model simultaneously takes into account the effects of: (i) the screening of charged centers by mobile carriers, (ii) the distribution of charged centers inside the structure, (iii) the actual electron distribution in the inversion layer, (iv) the charged-center correlation, and (v) the effect of image charges. A Monte Carlo calculation to obtain the effective mobility of electrons in an n-Si(100) inversion layer by using the model proposed for Coulomb scattering has been developed. The importance of correctly taking into account the effects above to study Coulomb scattering in inversion layers is pointed out.

引用

页码：924 / 934

页数：11

共 38 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].

ANDO, T ;

FOWLER, AB ;

STERN, F .

REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672

[2] INFLUENCE OF THE INTERFACE-STATE DENSITY ON THE ELECTRON-MOBILITY IN SILICON INVERSION-LAYERS [J].

BANQUERI, J ;

GAMIZ, F ;

CARCELLER, JE ;

CARTUJO, P ;

LOPEZVILLANUEVA, JA .

JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (09) :1159-1163

[3] MONTE-CARLO CALCULATION OF HOT-ELECTRON DRIFT VELOCITY IN SILICON (100) INVERSION LAYER BY INCLUDING 3 SUB-BANDS [J].

BASU, PK .

SOLID STATE COMMUNICATIONS, 1978, 27 (06) :657-660

[4] EFFECT OF COULOMB SCATTERING ON SILICON SURFACE MOBILITY [J].

CHENG, YC ;

SULLIVAN, EA .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :187-192

[5] ELECTRODYNAMICS OF QUASI-2-DIMENSIONAL ELECTRONS [J].

DAHL, DA ;

SHAM, LJ .

PHYSICAL REVIEW B, 1977, 16 (02) :651-661

[6] HOT-ELECTRON EFFECTS IN SILICON QUANTIZED INVERSION LAYERS [J].

FERRY, DK .

PHYSICAL REVIEW B, 1976, 14 (12) :5364-5371

[7] 1ST-ORDER OPTICAL AND INTERVALLEY SCATTERING IN SEMICONDUCTORS [J].

FERRY, DK .

PHYSICAL REVIEW B, 1976, 14 (04) :1605-1609

[8] ELECTRODYNAMICS AND THERMODYNAMICS OF A CLASSICAL ELECTRON SURFACE-LAYER [J].

FETTER, AL .

PHYSICAL REVIEW B, 1974, 10 (09) :3739-3745

[9] MONTE-CARLO STUDY OF ELECTRON-TRANSPORT IN SILICON INVERSION-LAYERS [J].

FISCHETTI, MV ;

LAUX, SE .

PHYSICAL REVIEW B, 1993, 48 (04) :2244-2274

[10] AN ANALYTICAL EXPRESSION FOR PHONON-LIMITED ELECTRON-MOBILITY IN SILICON-INVERSION LAYERS [J].

GAMIZ, F ;

BANQUERI, J ;

MELCHOR, I ;

CARCELLER, JE ;

CARTUJO, P ;

LOPEZVILLANUEVA, JA .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (05) :3289-3292

← 1 2 3 4 →