GROWTH OF ZNSE/MGS STRAINED-LAYER SUPERLATTICES BY MOLECULAR-BEAM EPITAXY

被引：33

作者：

TERAGUCHI, N

MOURI, H

TOMOMURA, Y

TANIGUCHI, H

RORISON, J

DUGGAN, G

机构：

[1] SHARP CO LTD,CTR MAT RES & ANAL,TENRI,NARA 632,JAPAN

[2] EUROPE LTD,SHARP LABS,OXFORD OX4 4GA,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 20期

关键词：

D O I：

10.1063/1.114820

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth of ZnSe/MgS strained-layer superlattices (SLSs) has been carried out by molecular beam epitaxy. The crystal quality of SLSs degraded with MgS thickness of more than about 3 monolayers. Photoluminescence due to the transition between quantized levels was observed. Photoluminescence peak energies higher than 3.0 eV at 77 K were observed, which are comparable to that of ZnMgSSe quaternary material. (C) 1995 American Institute of Physics.

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页码：2945 / 2947

页数：3

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