RELATIVE STABILITIES OF TETRAMETHYL ORTHOSILICATE AND TETRAETHYL ORTHOSILICATE IN THE GAS-PHASE

被引：36

作者：

CHU, JCS ^{[1
]}

BRESLIN, J ^{[1
]}

WANG, NS ^{[1
]}

LIN, MC ^{[1
]}

机构：

[1] EMORY UNIV,DEPT CHEM,ATLANTA,GA 30322

来源：

MATERIALS LETTERS | 1991年 / 12卷 / 03期

关键词：

D O I：

10.1016/0167-577X(91)90170-B

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The stabilities of Si(OCH3)4 and Si(OC2H5)4 have been studied pyrolytically using highly diluted mixtures near atmospheric-pressure conditions. FTIR spectrometric analyses of the disappearance of the reactants and the formation of various major stable products allow us to qualitatively account for the global difference in the measured overall first-order decay constants: TMOS is significantly more stable than TEOS. The mechanistic implication of these results is discussed.

引用

页码：179 / 184

页数：6

共 10 条

[1] DEPOSITION OF SILICON DIOXIDE FILMS AT REDUCED PRESSURE [J].