CURRENT/VOLTAGE CHARACTERISTICS, CHANNEL PINCHOFF AND FIELD DEPENDENCE OF CARRIER VELOCITY IN SILICON INSULATED-GATE FIELD-EFFECT TRANSISTORS

被引：18

作者：

WRIGHT, GT

机构：

来源：

ELECTRONICS LETTERS | 1970年 / 6卷 / 04期

关键词：

D O I：

10.1049/el:19700073

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：107 / &

共 10 条

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[3]

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[4]

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BERZ, F ;

FLINN, I .

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[6] THEORY OF INFLUENCE OF HOT ELECTRON EFFECTS ON INSULATED GATE FIELD EFFECT TRANSISTORS [J].

NEUMARK, GF .

SOLID-STATE ELECTRONICS, 1967, 10 (03) :169-&

[7] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].

STERN, F ;

HOWARD, WE .

PHYSICAL REVIEW, 1967, 163 (03) :816-&

[8]

VANNIELEN JA, 1967, PHILIPS RES REP, V22, P55

[9] THEORY OF THE SPACE-CHARGE-LIMITED SURFACE-CHANNEL DIELECTRIC TRIODE [J].

WRIGHT, GT .

SOLID-STATE ELECTRONICS, 1964, 7 (02) :167-175

[10] SPACE-CHARGE-LIMITED INSULTED-GATE SURFACE-CHANNEL TRANSISISTOR (SCLIGFET) [J].

WRIGHT, GT .

ELECTRONICS LETTERS, 1968, 4 (21) :462-+

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